13002 TRANSISTOR PDF

May 12, 2020   |   by admin

MJE / MJE NPN Silicon Power Transistors. These devices are designed for high-voltage, high-speed power switching inductive circuits where. Characteristics of the MJE bipolar transistor. Type – n-p-n; Collector-Emitter Voltage: V; Collector-Base Voltage: V; Emitter-Base Voltage: 9 V. Taiwan Semiconductor Bipolar Transistors – BJT are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for Taiwan.

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Any items must be returned in their original condition to qualify for a refund or replacement. We provide days warranty time. All parts quoted are new and unused and are in original factory packaging unless specified. We have own stock and we can also support our customers with long lead time buffer orders.

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Before placing purchase trandistor re-validate quotation. A wide variety of transistor options are available to you, such as bipolar junction transistor, triode transistor, and logic ics.

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